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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD641 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Converters Inverters Switching regulators Motor controls PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS MAX 600 Collector-base voltage Open emitter Collector-emitter voltage Open base 400 7 Emitter-base voltage Open collector Collector current 15 Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25ae 30 6 150 200 -65~200 UNIT V V V A A A W ae ae THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10mA ; IB=0 IE=1mA ; IC=0 IC=10A; IB=2A IC=10A; IB=2A VCB=500V; IE=0 VEB=7V; IC=0 IC=5A ; VCE=5V IC=0.5A ; VCE=10V 20 4 MIN 400 7 2SD641 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V V 1.5 2.0 0.5 0.1 140 V V mA mA NDU ICO E SEM ANG INCH Collector output capacitance IE=0 ; VCB=10V;f=1MHz TOR 150 MHz pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD641 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 |
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